CEA DSM - Inac
PhD position -Superconducting Circuits in Silicon Technology
CEA DSM - Inac
INAC, institut de recherche fédératif CEA-UJF, est un acteur majeur de la recherche fondamentale sur la matière condensée, la matière molle et la cryogénie à Grenoble.
Visitez la page de l'employeur
DÉTAILS DE L'OFFRE
Publié: il y a 1 mois
Date limite d'inscription: Non Spécifiée
Localisation: Grenoble, France
Vous devez vous connecter ou créer un compte pour enregistrer cette offre
Veuillez mentionner que vous avez trouvé ce poste sur Academic Positions lors de votre candidature.
PARTAGER CE POSTE

PhD position -Superconducting Circuits in Silicon Technology

SL-DRF-17-0356

RESEARCH FIELD

Mesoscopic physics / Physique de l'état condensé, chimie et nanosciences

ABSTRACT

A big advantage of the Silicon technology is its maturity and reliability. Incidentally, some materials used or useful in silicon based devices are superconducting at low temperature. The objective of this project is then to realize a new kind of MOSFET transistor-like devices for which the drain and sources electrodes will be superconducting. Once realized, these new quantum circuits will allow developing quantum architectures in a scalable technology.

At low temperature, a Silicon nano-MOSFET transistor behaves as a single electron transistor due to the electrostatic confinement and Coulomb interaction. This situation appears when the charging energy becomes larger than the thermal energy. On the other hand, the superconductivity is described by the condensation of a very large number of electrons pairs in a macroscopic quantum state. On a purely scientific level, the goal of this study is to understand better how antagonist properties can coexist in such hybrid devices. The objective will then be to fabricate devices like Josephson junction controlled by a gate and in which current can flow with no dissipation. These components, coupled to a capacitor, allow fabricating superconducting qubit for which the energy levels separation can be controlled by the gate. This point is important to adjust the coupling of the qubit with a superconducting cavity whose resonant frequency is fixed by the design. In many experimental situations, it is this coupling that allows reading or transferring the quantum information carried by the qubit.

From a technological point of view, the electrodes will be fabricated from superconducting silicides such as the platinum mono-silicide (PtSi) or Boron doped Silicon (Si:B) that can be superconducting using laser doping/annealing. In the case of silicides, the goal is to control the metal/semiconductor solid state reaction in order to obtain the good superconducting phase as close as possible to the transistor channel. For Si:B, the issue is to control the laser doping/annealing first on Silicon on insulator (SOI) and then on pre-existing devices without damaging them. The technological objective is to reduce the access resistances which are an important source of dissipation in commercial sub-micron transistors. It is a major issue in the micro-nano electronics industry where the energy consumption is a limiting factor for development.

In practice, the student will be part of the INAC/PHELIQS/LaTEQS laboratory and will join the DTSI/SDEP group at the CEA/LETI for the realization of simplified test structures and devices in a clean room. The low temperature measurements will be performed at the LATEQS at the CEA/INAC.

LOCATION

Institut nanosciences et cryogénie
Photonique, Electronique et Ingénierie Quantiques
Laboratoire de Transport Electronique Quantique et Supraconductivité
Place: Grenoble
Start date of the thesis: 01/10/2016

CONTACT PERSON

François LEFLOCH - francois.lefloch@cea.fr

CEA
DRF/INAC/PHELIQS/LATEQS
CEA
Institut Nanosciences et Cryogénie PHELIQS- LaTEQS
17 rue des martyrs 38054 Grenoble FRANCE

Phone number: +33 4 38 78 48 22

UNIVERSITY / GRADUATE SCHOOL

Université Grenoble Alpes
Ecole Doctorale de Physique de Grenoble

THESIS SUPERVISOR

François LEFLOCH

CEA
DRF/INAC/PHELIQS/LATEQS
CEA
Institut Nanosciences et Cryogénie PHELIQS- LaTEQS
17 rue des martyrs 38054 Grenoble FRANCE

Candidatez ici
Vous devez vous connecter ou créer un compte pour enregistrer cette offre

POSTULER

Détails personnels
Upload your CV and attachments
Le format de fichier doit être .doc, .pdf, ou .rtf et le fichier ne peut pas dépasser 2 Mo au total.
Le format de fichier doit être .doc, .pdf, ou .rtf et le fichier ne peut pas dépasser 2 Mo au total.

En déposant une candidature pour un poste publié sur Academic Positions, vous acceptez nos conditions générales et notre politique de confidentialité.

S'ABONNER A DES ANNONCES COMME CELLES-CI

  • Types d'emploi

3 POSTES PROPOSÉS PAR CET EMPLOYEUR

CEA DSM - Inac
CEA DSM - Inac
Localisation: Grenoble, France
PhD position - Development of Perovskite Quantum Dots for All-Optical Quantum Information Technology
SL-DRF-17-1114 ABSTRACT Context: Halide perovskite CsPbX3 (X=Cl,Br,I) quantum dots (QDs) have drawn significant research interest in the past three years due to their outstanding optical properties [1]: narrow photoluminescence (PL) band (10-40 nm FWHM) with room...
CEA DSM - Inac
CEA DSM - Inac
Localisation: Grenoble, France
PhD - Circuits Supraconducteurs en Technologie Silicium
SL-DRF-17-0356 DOMAINE DE RECHERCHE Physique mésoscopique / Physique de l'état condensé, chimie et nanosciences RÉSUMÉ DU SUJET L’énorme avantage de la technologie Silicium est sa maturité et sa fiabilité. Or, il se trouve que certains matériaux utilisés...